Low-temperature crosslinked soluble polyimide as a dielectric for organic thin-film transistors: enhanced electrical stability and performance

被引：0

作者：

Yoo, Sungmi ^{[1
]}

Kim, Kyeongmin ^{[2
]}

Kim, Cho Long ^{[1
]}

Choi, Seong Hun ^{[1
,3
]}

Won, Jong Chan ^{[1
,3
]}

Ahn, Taek ^{[2
]}

Kim, Yun Ho ^{[1
,3
]}

机构：

[1] Korea Res Inst Chem Technol, Div Adv Mat, 141 Gajeong ro, Daejeon, 34114, South Korea

[2] Kyungsung Univ, Dept Appl Chem, 309 Suyeong ro, Busan 48434, South Korea

[3] Univ Sci & Technol, KRICT Sch, Adv Mat & Chem Engn, 217 Gajeong ro, Daejeon, 34113, South Korea

来源：

JOURNAL OF PHYSICS-MATERIALS | 2024年 / 7卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

polymer dielectric; polyimide; cross-linking network; mobility; thin-film transistors; FIELD-EFFECT TRANSISTORS; ANHYDRIDE) GATE INSULATORS; SURFACE MODIFICATION; TRANSPARENT;

D O I：

10.1088/2515-7639/ad1ea0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and hexafluoroisopropylidene diphthalic anhydride (6FDA) as the dianhydrides and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FHAB) as a diamine. To further enhance the electrical performance, the SPI thin films were crosslinked with methylated/ethylated (hydroxymethyl)benzoguanamine (HMBG) through a low temperature process at 160 degrees C. Crosslinking considerably improved the insulating properties, resulting in a substantial reduction in leakage current from 10-7 A cm-2 to 10-9 A cm-2 at 2.0 MV cm-1. When crosslinked SPIs were used as gate dielectrics in OTFTs, device stability and reliability, as measured by the off-current, threshold voltage, and hysteresis, improved significantly. Our results demonstrate the potential of crosslinked SPIs as effective gate dielectric materials for advanced organic thin-film transistors.

引用

页数：10