Breaking AgInTe2 Quantum Dot Chain to Fabricate AgInTe2-ZnS Janus Nanocrystals

被引:4
作者
Bhattacharya, Debadrita [2 ]
Bhakat, Arin [1 ]
Debnath, Tushar [2 ]
机构
[1] Indian Inst Technol Guwahati, Dept Chem, Gauhati 781039, Assam, India
[2] Indian Inst Technol Guwahati, Ctr Nanotechnol, Gauhati 781039, Assam, India
关键词
TELLURIUM; NANOPARTICLES; GROWTH; MECHANISM; EXCITON;
D O I
10.1021/acs.inorgchem.3c03156
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Colloidal multinary chalcogenides (MnCs) have emerged as excellent optoelectronic materials, where S- and Se-based MnCs show considerable progress; however, the Te counterpart suffers from detrimental surface oxidation. Moreover, Te-based I-III-VI MnCs (e.g., AgInTe2) tend to form a one-dimensional (1-D) anisotropic structure via the self-assembly of surface-oxidized Te, thus restricting the isolation of AgInTe2 quantum dots (QDs). We report successful control of the self-assembly of Te-based MnCs to arrest the growth of AgInTe2 QDs by using a synergistic capping agent (dodecanethiol and oleic acid). The reaction proceeds with several intermediates, including hexagonal microrods (MR), tetragonal QDs in a chain arrangement, and tetragonal MRs. Importantly, we note that the incorporation of ZnS QDs triggers the breaking of the chain arrangement of the AgInTe2 QDs and the emergence of evenly distributed AgInTe2-ZnS Janus nanocrystals with significantly reduced long-term Te-oxidative properties. Arresting the AgInTe2 QD chain and the subsequent Janus nanocrystal formation could have promising opportunities for 1-D charge hopping and efficient charge transport for optoelectronic applications, respectively.
引用
收藏
页码:20219 / 20227
页数:9
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