High-performance and broadband 2D ReS2/MoS2 semivertical heterojunction photodiodes

被引:4
作者
Wang, Yichen [1 ]
Wu, Zhangting [1 ]
Zheng, Peng [1 ]
Zhang, Yang [1 ]
机构
[1] Hangzhou Dianzi Univ, Dept Elect Sci & Technol, Lab Nanoelect & NanoDevices, Hangzhou 310018, Peoples R China
基金
中国国家自然科学基金;
关键词
van der waals heterostructures; ReS2; MoS2; Photodiode; Self-powered; MONOLAYER; RES2; HETEROSTRUCTURE;
D O I
10.1016/j.mssp.2023.107650
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The emergence of two-dimensional van der Waals heterostructures has overcome the limitations of conventional heterostructure lattices and materials, opening new possibilities for the development of micro-and nanoscale photodiodes. To achieve a balance between the response speed and sensitivity in two-dimensional photodetec-tors, we designed a 2D ReS2/MoS2 semivertical heterojunction photodiode with a unilateral depletion region. This photodiode exhibits excellent self-powered capability, a broadband photovoltaic response of 532-785 nm, high responsivity (0.197A/W), power conversion efficiency (2.1%) and detectivity (10 ⩍12 Jones). In particular, the photodiode achieves an ultra-fast response time of 13/15 & mu;s, enabling a detectable signal cut-off frequency of over 45 kHz. To further enhance the sensitivity of the photodiode under photovoltaic operation, we applied a layer of photosensitive PbS quantum dots (QDs) to the heterojunction and observed an approximately 21% improvement in device responsivity under 532 nm illumination. These findings highlight the potential of ReS2/ MoS2 heterostructures for applications in high-performance photodiodes as well as solar cells.
引用
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页数:8
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