Polypeptoids: Exploring the Power of Sequence Control in a Photoresist for Extreme-Ultraviolet Lithography

被引:10
作者
Kafer, Florian [1 ]
Wang, Chaoqiuyu [1 ,2 ]
Huang, Yuming [1 ]
Bard, Francesca [1 ]
Segalman, Rachel [3 ]
Ober, Christopher K. [1 ]
机构
[1] Cornell Univ, Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Chem & Chem Biol, Ithaca, NY 14853 USA
[3] UC Santa Barbara, UC santa Barbara, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
DUV photolithography; extreme-ultraviolet lithography; photoresists; polypeptoids; COPOLYMERS;
D O I
10.1002/admt.202301104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new type of a positive tone chemically amplified photoresist based on well-defined, sequence-controlled polypeptoids with ten repeat-units are synthesized and their potential for extreme-UV lithography (EUVL) is demonstrated, resulting in line-space patterns of 70 nm pitch. The synthesized samples contain 4-(ethyl) phenol (Eph) and propyne (Ppy) side chains, while their change in solubility upon exposure is induced by the deprotection of 4-(ethyl) phenol side groups. The resist performance is evaluated using deep UV and extreme-UV lithography. While all samples are developable in isopropyl alcohol, the content, and the sequence of hydrophobic alkyne side chains lead to a detectable change in solubility, dissolution rate, and resist performance. Polypeptoids of defined composition and sequence and a length of ten repeat units are prepared and their potential as a new type of photoresist for extreme-UV lithography (EUVL) is demonstrated achieving well defined line/space patterns down to 35 nm half pitch, while the sequence and composition are shown to affect the lithographic performance.image
引用
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页数:5
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