Effect of deposition time on copper incorporation of ZnS thin films by low-cost technique

被引：8
|
作者：
Souza, Harshal Jason D. [1 ]
D'Souza, Naveen [1 ]
Ashith, V. K. [1 ,3 ]
Moger, Sahana Nagappa [2 ]
D'Silva, E. Deepak [1 ]
机构：
[1] St Philomena Coll, Post Grad Dept Phys, Puttur 574202, Karnataka, India
[2] Mangalore Inst Technol & Engn MITE, Dept Phys, Mangalore 574225, Karnataka, India
[3] REVA Univ, Sch Appl Sci, Dept Phys, Bengaluru 560064, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2023年 / 294卷
关键词：
II -VI semiconductors; Deposition time; Doping; Crystallinity; CHEMICAL BATH DEPOSITION; OPTICAL-PROPERTIES; CU; THICKNESS; GROWTH;
D O I：
10.1016/j.mseb.2023.116551
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The copper-doped zinc sulphide (CuZnS) thin films were prepared by low-cost chemical bath deposition (CBD). The deposited films were varied by copper doping concentration and preparation time. The structural, optical, and electrical properties of the films were analyzed. The XRD patterns of the films exhibit polycrystalline nature with a prominent peak in the (111) plane. The improvement of the crystallinity was observed in the variation of deposition time. The lattice constant of the CuZnS films slightly deviates from that of pure ZnS. The deposited films have shown uniform substrate coverage without pinholes. EDAX results confirmed the presence of copper, zinc, and sulphur in the deposited films. The absorbance was found to be high in the ultraviolet region. The bandgap of the films obtained was 3.7 eV and marginally reduced with deposition time. The Urbach energy of the CuZnS films varied with deposition time. The PL study confirms the incorporation of copper and band edge emission. The electrical properties of the films were investigated by Hall effect measurement.
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页数：9
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