A High-Efficiency W-Band Frequency Quadrupler With Current-Reusing Stacked Push-Push Stages

被引：5
作者：
Mensah, Yaw A. [1 ]
Rao, Sunil G. [1 ]
Teng, Jeffrey W. [1 ]
Cressler, John D. [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 04期
基金：
美国国家科学基金会;
关键词：
Baluns; Power generation; Harmonic analysis; Gain; BiCMOS integrated circuits; Silicon germanium; Bandwidth; Frequency multiplier; frequency quadrupler; Index Terms; push--push doubler (PPD); SiGe BiCMOS; SiGe HBT; W-band;
D O I：
10.1109/LMWT.2022.3226660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a $W$ -band frequency quadrupler with current-reusing stacked push-push doubler (PPD) stages, implemented in a 180-nm SiGe BiCMOS process. A series balun is used between two PPDs to generate differential signals for the second PPD stage, while also allowing half of the second stage's current to be reused in the first doubler stage, thereby improving efficiency. The circuit exhibits a compelling output power, peak conversion gain, bandwidth, harmonic rejection, and efficiency for a quadrupler in this frequency range across a 3-dB bandwidth of 76-94 GHz. The quadrupler achieves a peak conversion gain of 13.5 dB, a peak output power of 8.7 dBm, and a maximum dc-to-RF efficiency of 6.4%.
引用
收藏
页码：447 / 450
页数：4
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