Application of bulk silicon carbide technology in high temperature MEMS sensors

被引：9
作者：
Zhai, Yanxin [1 ,3 ]
Li, Haiwang [2 ,3 ]
Wu, Hanxiao [4 ]
Tao, Zhi [2 ,3 ]
Xu, Guoqiang [2 ,3 ]
Cao, Xiaoda [1 ,3 ]
Xu, Tiantong [2 ,3 ]
机构：
[1] Beihang Univ, Sch Energy & Power Engn, Beijing 100191, Peoples R China
[2] Beihang Univ, Res Inst Aeroengine, Beijing 100191, Peoples R China
[3] Natl Key Lab Sci & Technol Aero Engine Aerothermod, Beijing 100191, Peoples R China
[4] China Acad Launch Vehicle Technol, Beijing Inst Astronaut Syst Engn, Beijing 100076, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 173卷
基金：
中国国家自然科学基金;
关键词：
MEMS; Silicon carbide; Bulk process; High temperature; Accelerometer; PIEZORESISTIVE PRESSURE SENSORS; INDUCTIVELY-COUPLED PLASMA; CHEMICAL-VAPOR-DEPOSITION; I-N-DIODE; SIC MEMS; 3C-SIC FILMS; SINGLE-CRYSTALLINE; OHMIC CONTACTS; THIN-FILMS; FABRICATION;
D O I：
10.1016/j.mssp.2024.108137
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
-SiC is widely used in power electronics and high-temperature devices due to its comprehensive physicochemical properties, including high thermal stability, mechanical strength, etc. In recent years, the advantages of SiC for MEMS have gradually attracted the attention of researchers. However, the development of bulk SiC technology in the field of MEMS sensors has not been reviewed, especially in the fabrication and performance of MEMS bulk SiC sensors. The purpose of this review is to summarize the development status of bulk SiC materials, processes and sensors. The existing pressure sensors, accelerometers and other sensors based on SiC are reviewed. And the possible technological innovations for bulk SiC MEMS sensors are further proposed.
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页数：17
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