Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

被引:10
作者
Xia, Hanchi [1 ,2 ]
Yang, Yongtao [1 ,2 ]
Cao, Jia [3 ]
Zhang, Fan [1 ,2 ]
Zhang, Yang [4 ,5 ]
Wu, Zhenping [1 ,2 ]
机构
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
[3] Beijing Inst Radio Measurement, Beijing 100039, Peoples R China
[4] Nankai Univ, Inst Modern Opt, Tianjin 300071, Peoples R China
[5] Nankai Univ, Tianjin Key Lab Microscale Opt Informat Sci & Tech, Tianjin 300071, Peoples R China
基金
中国国家自然科学基金;
关键词
Wafer-scale; MOCVD; Phase diagram; Growth rate; ALPHA-GA2O3; THIN-FILMS; BETA-GA2O3;
D O I
10.1016/j.vacuum.2023.112388
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The potential of gallium oxide (Ga2O3) as a promising semiconductor for advanced electronics and optoelec-tronics has been propelled by its wide bandgap, high breakdown voltage tolerance, and excellent chemical and thermal stability. To develop it into an industrial-level application, extensive research needs to be conducted to advance wafer-scale and high-quality epitaxy growth techniques. In this work, a close-coupled showerhead (CCS) metal-organic chemical vapor deposition (MOCVD) system was used to grow wafer-scale Ga2O3 films. Through a detailed examination of growth parameters including substrate temperature, oxygen flow rate, precursor pro-portion, and chamber pressure, as well as their effect on film crystallinity, surface morphology, and optical properties, a comprehensive growth phase diagram and control over the growth rate of 2-inch Ga2O3 thin films were obtained at a wafer-scale. These findings suggest that the CCS-MOCVD system presents a competitive avenue for future industrial high-speed fabrication of single-phase Ga2O3 films.
引用
收藏
页数:7
相关论文
共 31 条
[1]   Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD [J].
Alema, Fikadu ;
Hertog, Brian ;
Osinsky, Andrei ;
Mukhopadhyay, Partha ;
Toporkov, Mykyta ;
Schoenfeld, Winston V. .
JOURNAL OF CRYSTAL GROWTH, 2017, 475 :77-82
[2]   First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping [J].
Chen, Weiqu ;
Luo, Haoxun ;
Chen, Zimin ;
Pei, Yanli ;
Wang, Gang ;
Lu, Xing .
APPLIED SURFACE SCIENCE, 2022, 603
[3]   Layer-by-layer growth of ε-Ga2O3 thin film by metal-organic chemical vapor deposition [J].
Chen, Zimin ;
Li, Zeqi ;
Zhuo, Yi ;
Chen, Weiqu ;
Ma, Xuejin ;
Pei, Yanli ;
Wang, Gang .
APPLIED PHYSICS EXPRESS, 2018, 11 (10)
[4]   Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection [J].
Fan, Ming-Ming ;
Lu, Ying-Jie ;
Xu, Kang-Li ;
Cui, Yan-Xia ;
Cao, Ling ;
Li, Xiu-Yan .
APPLIED SURFACE SCIENCE, 2020, 509 (509)
[5]   CRYSTAL STRUCTURE OF BETA-GA2O3 [J].
GELLER, S .
JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (03) :676-684
[6]   Recent progress in Ga2O3 power devices [J].
Higashiwaki, Masataka ;
Sasaki, Kohei ;
Murakami, Hisashi ;
Kumagai, Yoshinao ;
Koukitu, Akinori ;
Kuramata, Akito ;
Masui, Takekazu ;
Yamakoshi, Shigenobu .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (03)
[7]   Development of gallium oxide power devices [J].
Higashiwaki, Masataka ;
Sasaki, Kohei ;
Kuramata, Akito ;
Masui, Takekazu ;
Yamakoshi, Shigenobu .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (01) :21-26
[8]   Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].
Higashiwaki, Masataka ;
Sasaki, Kohei ;
Kuramata, Akito ;
Masui, Takekazu ;
Yamakoshi, Shigenobu .
APPLIED PHYSICS LETTERS, 2012, 100 (01)
[9]   Growth and properties of one-dimensional β-Ga2O3 nanostructures on cplane sapphire substrates [J].
Hu, Daqiang ;
Zhuang, Shiwei ;
Dong, Xin ;
Du, Guotong ;
Zhang, Baolin ;
Zhang, Yuantao ;
Yin, Jingzhi .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 75 :31-35
[10]   Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD [J].
Li, Zeming ;
Jiao, Teng ;
Yu, Jiaqi ;
Hu, Daqiang ;
Lv, Yuanjie ;
Li, Wancheng ;
Dong, Xin ;
Zhang, Baolin ;
Zhang, Yuantao ;
Feng, Zhihong ;
Li, Guoxing ;
Du, Guotong .
VACUUM, 2020, 178 (178)