Theoretical design of two-dimensional AMInP2X3Y3 (AM = Li, Na, K; X/Y = S, Se, Te) monolayers for highly efficient excitonic solar cells

被引:5
作者
Liu, Linlin [1 ,2 ]
Xie, Yu [1 ,2 ,3 ]
Tse, John S. [1 ,2 ,4 ]
Ma, Yanming [1 ,2 ,5 ]
机构
[1] Jilin Univ, Int Ctr Computat Method & Software, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[3] Jilin Univ, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China
[4] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
[5] Jilin Univ, Int Ctr Future Sci, Changchun 130012, Peoples R China
来源
MATERIALS ADVANCES | 2023年 / 4卷 / 02期
基金
中国国家自然科学基金;
关键词
HETEROSTRUCTURES; SEMICONDUCTOR; PHOSPHORENE; DICHALCOGENIDES; NANOTUBES; BANDGAP;
D O I
10.1039/d2ma00937d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional materials are regarded as promising candidates for use in photovoltaic solar cells. On the basis of first-principles calculations, we show that the 2D alkali metal indium phosphorus trichalcogenides AMInP(2)X(3)Y(3) (AM = Li, Na, or K; X/Y = S, Se, or Te) monolayers possess excellent stability and great potential for solar energy conversion applications. The cohesive energies, phonon spectra, and elastic constants of these materials demonstrate their high thermodynamic, kinetic, and mechanical stabilities. The 2D NaInP2Te6 (NT), KInP2Te6 (KT), and AMInP(2)Te(3)Se(3) (LTS,NTS, and KTS) monolayers are promising donor materials for excitonic solar cells with high photovoltaic performance. More importantly, the appropriate donor bandgaps and small conduction band offsets of these type II heterostructures result in power conversion efficiencies (PCE) of up to 22.12% (NT/InSe), 18.23% (KT/MoGe2N4), 21.93% (NTS/MoGe2N4) and 18.00% (KTS/T-HfSe2), making them promising candidates for solar energy conversion applications. Our findings reveal the great potential of 2D alkali metal indium phosphorus trichalcogenides for the design of high-performance excitonic solar cells.
引用
收藏
页码:570 / 577
页数:8
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