Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode

被引：8
作者：
Deniz, Ali Riza [1 ]
机构：
[1] Hakkari Univ, Colemerik VHS, Dept Elect & Energy, TR-30000 Hakkari, Turkiye
来源：
MICROELECTRONICS RELIABILITY | 2023年 / 147卷
关键词：
Cobalt oxide; MIS; Current-voltage; Capacitance-voltage; C-V CHARACTERISTICS; SCHOTTKY DIODE; ELECTRICAL CHARACTERISTICS; I-V;
D O I：
10.1016/j.microrel.2023.115114
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the production and electrical characterization of Schottky circuit elements of Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality factor (n), barrier height (& phi;b) and series resistance of Au/CoO/p-Si/Al structures were calculated from the forward bias I-V characteristics of the diode using the different methods such as Thermionic Emission method (TE), Cheung functions and Norde method. The variations of diode parameters from I-V measurements depending on the temperature were examined. In addition, diffusion potential (Vd), barrier height (& phi;b), Fermi energy level (Ef) and free carrier concentration (Na) were calculated from the C-V measurements of the diode. The variations of these values with frequency were examined from the C-V measurements.
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页数：11
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