Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires

被引：8

作者：

Noh, Siyun ^{[1
]}

Shin, Jaehyeok ^{[1
]}

Yu, Yeon-Tae ^{[1
]}

Ryu, Mee-Yi ^{[2
]}

Kim, Jin Soo ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Res Ctr Adv Mat Dev, Dept Elect & Informat Mat Engn, Div Adv Mat Engn, Jeonju 54896, South Korea

[2] Kangwon Natl Univ, Dept Phys, Chunchon 24341, South Korea

来源：

NANOMATERIALS | 2023年 / 13卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

photoelectrochemical water splitting; InGaN; GaN hetero-structure nanowires; photocathode; Si; interface properties; GAN NANOWIRES; SPONTANEOUS GROWTH; PHOTOCATHODE; FABRICATION; GENERATION; MECHANISM; EFFICIENT;

D O I：

10.3390/nano13020358

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte. The PEC-WS using the InGaN/GaN-HSNW PC shows the current density of 12.6 mA/cm(2) at -1 V versus reversible hydrogen electrode (RHE) and applied-bias photon-to-current conversion efficiency of 3.3% at -0.9 V versus RHE. The high-performance PEC-WS using the InGaN/GaN HSNWs can be explained by the increase in the reaction probability of carriers at the interface between InGaN NWs and electrolyte, which was analyzed by electrical resistance and capacitance values defined therein.

引用

页数：12

共 55 条

[1] Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode [J].