Enhanced Room-Temperature Thermoelectric Performance of 2D-SnSe Alloys via Electric-Current-Assisted Sintering

被引:1
作者
Manibalan, Kesavan [1 ]
Ho, Meng-Yuan [1 ]
Du, You-Cheng [1 ]
Chen, Hung-Wei [1 ]
Wu, Hsin-Jay [1 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
关键词
thermoelectrics; SnSe single crystal; 2D materials; radio frequency sputtering; multistep deposition; POLYCRYSTALLINE SNSE; FIGURE; MERIT;
D O I
10.3390/ma16020509
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single-crystalline tin-selenide (SnSe) has emerged as a high-performance and eco-friendly alternative to the lead-chalcogens often used in mid-temperature thermoelectric (TE) generators. At high temperature >800 K, the phase transition from Pnma to Cmcm causes a significant rise in the TE figure-of-merit (zT) curve. Conversely, the SnSe TE requires a booster at low temperatures, which allows broader applicability from a device perspective. Herein, a synergy of Cu alloy and Ag-coating is realized through a sequential multi-step synthesis, designed to combine different metal deposition effects. Single-crystalline (Cu2Se)(x)(SnSe)(1-x) alloys grown by the Bridgman method were then coated with a thin Ag layer by radio frequency (RF) sputtering, and the interlayer epitaxial film was observed via electric-current assisted sintering (ECAS). Consequently, the thin Ag-coating improves the electrical conductivity (sigma) and reduces the thermal conductivity (kappa) for (Cu2Se)(0.005)(SnSe)(0.995)+Ag alloy, increasing the zT curve at close to room temperature (373 K). The incorporation of multistep addition by ECAS enables tuning of the overall solubility of the alloy, which opens a new avenue to optimize TE performance in anisotropic 2D materials.
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页数:10
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