Ferroelectricity in Epitaxial Perovskite Oxide Bi2WO6 Films with One-Unit-Cell Thickness

被引：6
|
作者：
Zhou, Song [1 ,2 ]
Liao, Lei [1 ,2 ]
Chen, Lan [1 ,2 ]
Feng, Baojie [1 ,2 ]
He, Xiaoyue [3 ]
Bai, Xuedong [1 ,2 ]
Song, Chuangye [1 ,3 ]
Wu, Kehui [1 ,2 ,3 ,4 ,5 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[4] Peking Univ, Interdisciplinary Inst Light Element Quantum Mat, Beijing 100871, Peoples R China
[5] Peking Univ, Res Ctr Light Element Adv Mat, Beijing 100871, Peoples R China
来源：
NANO LETTERS | 2023年 / 23卷 / 17期
基金：
中国国家自然科学基金;
关键词：
perovskite oxide; ferroelectricity; pulsedlaser deposition; piezoresponse force microscopy; scanning transmission electron microscopy;
D O I：
10.1021/acs.nanolett.3c01426
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Retaining ferroelectricity in ultrathinfilms or nanostructuresis crucial for miniaturizing ferroelectric devices, but it is a challengingtask due to intrinsic depolarization and size effects. In this study,we have shown that it is possible to stably maintain in-plane polarizationin an extremely thin, one-unit-cell thick epitaxial Bi2WO6 film. The use of a perfectly lattice-matched NdGaO3 (110) substrate for the Bi2WO6 filmminimizes strain and enhances stability. We attribute the residualpolarization in this ultrathin film to the crystal stability of theBi-O octahedral framework against structural distortions. Ourfindings suggest that ferroelectricity can surpass the critical thicknesslimit through proper strain engineering, and the Bi2WO6/NdGaO3 (110) system presents a potential platformfor designing low-energy consumption, nonvolatile ferroelectric memories.
引用
收藏
页码：7838 / 7844
页数：7
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