Ferroelectricity in Epitaxial Perovskite Oxide Bi2WO6 Films with One-Unit-Cell Thickness

被引：6

作者：

Zhou, Song ^{[1
,2
]}

Liao, Lei ^{[1
,2
]}

Chen, Lan ^{[1
,2
]}

Feng, Baojie ^{[1
,2
]}

He, Xiaoyue ^{[3
]}

Bai, Xuedong ^{[1
,2
]}

Song, Chuangye ^{[1
,3
]}

Wu, Kehui ^{[1
,2
,3
,4
,5
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

[4] Peking Univ, Interdisciplinary Inst Light Element Quantum Mat, Beijing 100871, Peoples R China

[5] Peking Univ, Res Ctr Light Element Adv Mat, Beijing 100871, Peoples R China

来源：

NANO LETTERS | 2023年 / 23卷 / 17期

基金：

中国国家自然科学基金;

关键词：

perovskite oxide; ferroelectricity; pulsedlaser deposition; piezoresponse force microscopy; scanning transmission electron microscopy;

D O I：

10.1021/acs.nanolett.3c01426

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Retaining ferroelectricity in ultrathinfilms or nanostructuresis crucial for miniaturizing ferroelectric devices, but it is a challengingtask due to intrinsic depolarization and size effects. In this study,we have shown that it is possible to stably maintain in-plane polarizationin an extremely thin, one-unit-cell thick epitaxial Bi2WO6 film. The use of a perfectly lattice-matched NdGaO3 (110) substrate for the Bi2WO6 filmminimizes strain and enhances stability. We attribute the residualpolarization in this ultrathin film to the crystal stability of theBi-O octahedral framework against structural distortions. Ourfindings suggest that ferroelectricity can surpass the critical thicknesslimit through proper strain engineering, and the Bi2WO6/NdGaO3 (110) system presents a potential platformfor designing low-energy consumption, nonvolatile ferroelectric memories.

引用

页码：7838 / 7844

页数：7

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