Model Validation for Scanning Electron Microscopy

被引:5
作者
Ridzel, O. Yu. [1 ]
Yamane, W. [1 ]
Mansaray, I. [1 ]
Villarrubia, J. S. [1 ]
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII | 2023年 / 12496卷
关键词
critical dimension; electron microscopy; electron transport modeling; nanometer-scale dimensional metrology; secondary electron yield measurement; SEM; STEM; MEAN FREE PATHS; SECONDARY-ELECTRON; OPTICAL-ABSORPTION; SPECTRUM; SILICON; STATES; RANGE; YIELD; FIELD; SEM;
D O I
10.1117/12.2661103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We are beginning projects to validate the physics models used for interpretation of electron microscopy images. In one of them, we will measure electron yields and energy spectra from cleaned well-characterized samples subjected to electron bombardment inside of a spherical retarding field analyzer in ultra-high vacuum. In another, we will measure the same features, lithographically patterned on free-standing Si membranes, with measurement techniques that differ in their interaction physics. A modeling project will compare measurement results with simulations using existing and new models. Good models should predict the observed yields and produce agreement among measurement techniques.
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页数:7
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