Low-temperature sintering and high-frequency dielectric properties of ZTS ceramics with V2O5-B2O3 addition

The effects of different binary sintering additives of V2O5-B2O3 on the high frequency dielectric properties of ZnO-TiO2-SnO2 ceramics were investigated in order to further reduce the sintering temperature of ceramics and improve the properties of ceramics. In this study, compared with single V2O5 forming liquid phase at high temperature, V2O5-B2O3 can further activate the reaction at the interface between the V-rich liquid phase and ZnO grains during sintering. The temperature of rutile phase was reduced from 950 to 900 degrees C by the binary sintering aid, and the ZnO-TiO2-SnO2 ceramic with a density of 5.07 g/cm(3) was successfully sintered at 900 degrees C. The optimal ratio of binary sintering additive is V2O5:B2O3 = 3:1. Compared with the single sintering aid V2O5, the binary sintering additive V2O5-B2O3 can effectively inhibit the abnormal growth of grains and ensure the low temperature sintering of the material while still maintaining its excellent dielectric properties. The property of the ZTS ceramics is epsilon(r) = 29.2, tan delta = 5.32 x 10(-4) when the sintering temperature is 900 degrees C.