A MoSSe/MXene-Based High Performance UV-Vis-NIR Photodetector

被引：6

作者：

Keerthi, C. J. ^{[1
]}

Halder, Sayan ^{[2
]}

Siraj, Sohel ^{[1
]}

Chakraborty, Chanchal ^{[2
]}

Sahatiya, Parikshit ^{[1
]}

Pal, Subhradeep ^{[1
]}

机构：

[1] Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, Telangana, India

[2] Birla Inst Technol & Sci Pilani, Dept Chem, Hyderabad Campus, Hyderabad, Telangana, India

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 14期

关键词：

Photodetector; Janus materials; MXene; responsivity; UV-Vis-NIR photodetector;

D O I：

10.1109/LPT.2023.3281637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a hydrothermally synthesized MoSSe-based wideband photodetector (PD) offering excellent responsivity with sub-second response time. The overall device structure is MXene/MoSSe/Ag with Si as the substrate. The cathode and anode contact of the PD is fabricated with MXene (Ti(3)C(2)Tx) and Ag, respectively. The Ti(3)C(2)Tx and MoSSe layers are deposited using the spin-coating method, while the Ag electrode is deposited using the thermal evaporation technique. The fabricated PD exhibits excellent photodetection capability between 350 nm to 950 nm with a peak responsivity of 8.89 A.W-1 at 460 nm. The measured value of external quantum efficiency (EQE), and detectivity (D*) of the PD at 420 nm at 24.96% and 9.07 x 10(9) Jones, respectively. Also, the linearity measurement indicates the efficacy of the PD up to 343 K. In terms of transient performance, the measured rise and fall time of the PD are approximately 0.12 sec and 0.13 sec, respectively.

引用

收藏

页码：801 / 804

页数：4

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