Frequency-Reconfigurable Dual-Band Low-Noise Amplifier With Interstage Gm-Boosting for Millimeter-Wave 5G Communication

被引：11

作者：

Lee, Seungchan ^{[1
]}

Hong, Songcheol ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA USA

[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon, South Korea

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Dual band; Gain; 5G mobile communication; Inductors; Wireless communication; Millimeter wave technology; Transformers; 5G communication; CMOS; gm-boosting; millimeter-wave; multiband; reconfigurable; LNA; DESIGN; GAIN;

D O I：

10.1109/LMWT.2022.3220975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A differential low-noise amplifier (LNA) for the 5G n257 band and a frequency reconfigurable differential LNA for both the 5G n257 and n260 bands (26.5-29.5 and 37-40 GHz), fabricated in a 65-nm CMOS process, are presented. Both LNAs achieve better gain and noise figure performances due to the use of magnetically coupled gm-boosting in the common-gate stage of a cascode amplifier. Furthermore, the frequency-reconfigurable LNA uses frequency reconfigurable matching circuits at the input, interstage, and output to achieve optimal noise and gain matchings for each band. The single band LNA has a core chip area of 0.11 mm(2), a peak gain of 11.9 dB, a 3-dB bandwidth of 5.3 GHz, and a noise figure of 2.79 dB at 28.5 GHz. The dual-band LNA is capable of dual-band operation due to the reconfiguring matching circuits with switched coupled inductors (SCIs) and switched capacitors. It has a core chip area of 0.12 mm(2), peak gains of 11.1/8.5 dB, 3-dB bandwidths of 4.8/9.4 GHz, and minimum noise figures of 3.49/4.01 dB at 28.5/38 GHz, respectively.

引用

页码：463 / 466

页数：4

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