Band alignment and electrical properties of NiO/?-Ga2O3 heterojunctions with different ?-Ga2O3 orientations

被引：41

作者：

Deng, Yuxin ^{[1
]}

Yang, Ziqi ^{[2
]}

Xu, Tongling ^{[1
]}

Jiang, Huaxing ^{[2
]}

Ng, Kar Wei ^{[3
]}

Liao, Chao ^{[1
]}

Su, Danni ^{[1
]}

Pei, Yanli ^{[1
]}

Chen, Zimin ^{[1
]}

Wang, Gang ^{[1
]}

Lu, Xing ^{[1
]}

机构：

[1] Sun Yat sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[2] South China Univ Technol, Sch Microelect, Guangzhou 510641, Peoples R China

[3] Univ Macau, Inst Appl Phys & Mat Engn, Macau, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2023年 / 622卷

关键词：

Band alignment; Gallium oxide; Nickel oxide; Pn heterojunction; SCHOTTKY-BARRIER DIODES; BETA-GA2O3; BV2/R-ON; R-SP; PHOTODETECTOR; (2)OVER-BAR01; MERIT; EDGE;

D O I：

10.1016/j.apsusc.2023.156917

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Due to the difficulty of p-type doping in beta-Ga2O3, NiO/beta-Ga2O3 heterojunction becomes a promising candidate for fabricating bipolar devices. In this work, we performed a comparative study on the band alignment and electrical properties of the NiO/beta-Ga2O3 heterojunctions with different beta-Ga2O3 orientations. NiO thin films were sputtered on three beta-Ga2O3 substrates with (-20 1), (001) and (010) orientations and were subsequently fabricated into NiO/beta-Ga2O3 heterojunction diodes. A type-II band alignment between the NiO and beta-Ga2O3 was identified by the transmittance spectra and X-ray photoelectron spectroscopy (XPS) measurements. The valence band offsets (VBOs) of the NiO/beta-Ga2O3 heterojunctions on (-20 1), (001) and (010) substrates were deter-mined to be (2.12 +/- 0.06) eV, (2.44 +/- 0.07) eV and (2.66 +/- 0.07) eV, respectively, and their corresponding conduction band offsets (CBOs) were (1.22 +/- 0.06) eV, (1.49 +/- 0.07) eV and (1.86 +/- 0.07) eV. In addition, the fabricated heterojunction diodes showed good rectification properties with different turn-on voltages, which was in good agreement with the XPS results. The revealed influence of substrate orientations on the properties in NiO/beta-Ga2O3 heterojunctions were of great importance for the design and optimization of beta-Ga2O3-based het-erojunction devices.

引用

页数：8

共 38 条

[11] A comparative study of wet etching and contacts on ((2)over-bar01) and (010) oriented β-Ga2O3 [J].