Observation of plasmon excitation in liquid silicon by inelastic x-ray scattering

被引：0

作者：

Matsuda, Kazuhiro ^{[1
]}

Ishiguro, Yotaro ^{[2
]}

Kimura, Koji ^{[3
]}

Hagiya, Toru ^{[2
]}

Kajihara, Yukio ^{[4
]}

Nagaya, Kiyonobu ^{[2
]}

Inui, Masanori ^{[4
]}

Hiraoka, Nozomu ^{[5
]}

机构：

[1] Kumamoto Univ, Dept Phys, Kumamoto 8608555, Japan

[2] Kyoto Univ, Grad Sch Sci, Kyoto 6068502, Japan

[3] Nagoya Inst Technol, Dept Phys Sci & Engn, Nagoya 4668555, Japan

[4] Hiroshima Univ, Grad Sch Adv Sci & Engn, Higashihiroshima, Hiroshima 7398521, Japan

[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2024年 / 36卷 / 07期

关键词：

liquid metals; inelastic x-ray scattering; plasmon excitation; liquid silicon; MOLTEN SILICON; THERMOPHYSICAL PROPERTIES; TEMPERATURE-DEPENDENCE; ELECTRONIC-PROPERTIES; STRUCTURAL-CHANGES; PHASE-TRANSITION; VOLUME-PLASMON; SI; DENSITY; DISPERSION;

D O I：

10.1088/1361-648X/ad06f0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Inelastic x-ray scattering (IXS) measurements were performed for observing the excitation of bulk plasmons in metallic liquid silicon (Si). The peak due to plasmon excitation was observed within the energy loss around 17 eV. Combined with IXS data of crystalline Si measured at several elevated temperatures, it was found that temperature dependence of the excitation energy in the crystalline solid state is explained by the electron gas including the band gap effect, whereas in the metallic liquid state near the melting point, it exhibits a departure from the electron gas; the plasmon energy takes a lower value than that of the electron gas. Such lowering of plasmon energies is reasonably explained by a model incorporating semiconducting component to the electron gas. Non-simple metallic nature in liquid silicon is highlighted by the observation of electron collective dynamics.

引用

页数：8

共 64 条

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