共 38 条
Layer dependency of in-plane thermal conductivity in graphene/hBN van der Waals heterostructures: a molecular dynamics study
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作者:

Chen, Zehua
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Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Wang, Kefeng
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机构:
Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Hao, Zhao
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机构:
Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Ren, Kailin
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Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Yin, Luqiao
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Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Guo, Aiying
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Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Zhang, Jianhua
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Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China

Lu, Xiuzhen
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机构:
Shanghai Univ, Sch Microelect, Shanghai, Peoples R China Shanghai Univ, Sch Microelect, Shanghai, Peoples R China
机构:
[1] Shanghai Univ, Sch Microelect, Shanghai, Peoples R China
关键词:
HEXAGONAL BORON-NITRIDE;
HEAT-CONDUCTION;
TRANSPORT;
D O I:
10.1140/epjp/s13360-023-04522-z
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Due to their excellent in-plane thermal transport properties, graphene (G), hexagonal boron nitride (hBN), and their heterostructures have broad application prospects in the field of thermal management. The in-plane thermal conductivity (TC) of G/hBN van der Waals (vdW) heterostructures by nonequilibrium molecular dynamics (NEMD) method were investigated in this study. The results show that the TC of G/hBN vdW heterostructures is up to similar to 384 Wm(-1) K-1 at 300 K, an increase of similar to 16% compared to that of monolayer hBN. The TC of multilayer hBN is increased by up to similar to 60% with the addition of 6 layers of graphene. The effect of interlayer coupling strength on the TC of G/hBN vdW heterostructures is related to the number of layers and vertical thermal transport. The TC of the G/hBN vdW heterostructures is decreased by similar to 30-36% from 300 to 500 K. This work provides valuable references for the application of graphene and hBN in electronic devices to solve thermal management problems.
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