XFEM for multiphysics analysis of edge dislocations with nonuniform misfit strain: A novel enrichment implementation

被引：5

作者：

Duhan, Neha ^{[1
]}

Mishra, B. K. ^{[1
]}

Singh, I. V. ^{[1
]}

机构：

[1] Indian Inst Technol Roorkee, Dept Mech & Ind Engn, Roorkee 247667, Uttaranchal, India

来源：

COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING | 2023年 / 413卷

关键词：

Edge dislocation; Misfit strain; Multiphysics; Peach-Koehler force; Semiconductor; XFEM; FINITE-ELEMENT-METHOD; THREADING DISLOCATION; GAN; STRESS; FIELDS;

D O I：

10.1016/j.cma.2023.116079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the eXtended finite element method (XFEM) is implemented for the multiphysics analysis of edge dislocations near a heterostructure (bi-material) interface with nonuniform misfit strain. A novel enrichment is defined to incorporate the singular behavior of the electric potential due to dislocation. Nonlinear material properties due to temperature are taken for a thermo-electro-elastic analysis. The constituting materials having different lattice parameters result in a mismatch-misfit strain near the interface. This nonuniform misfit strain distribution affects the dislocations near the bi-material interface. Volterra dislocation modeling is performed to obtain all the primary and secondary fields around dislocations. An expression of the Peach-Koehler force considering the combined effect of the multiple fields is proposed. The results are obtained when the misfit strain is present on one side of the interface and both sides of the interface. A comparative study is performed on the Peach-Koehler force obtained in different cases of the misfit consideration with the case when the misfit strain is absent. Also for the case when the misfit strain is taken on the same side of the interface, the Peach-Koehler force is obtained by varying the misfit percentages corresponding to the different amounts of misfit relaxation. (c) 2023 Elsevier B.V. All rights reserved.

引用

页数：34

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