Oxygen plasma-assisted ultra-low temperature sol-gel-preparation of the PZT thin films

被引：6

作者：

Li, Han ^{[1
,2
]}

Hu, Yuhao ^{[1
,2
]}

Wei, Siyue ^{[1
,2
]}

Meng, Yingzhi ^{[1
]}

Wang, Ningzhang ^{[1
]}

Zhang, Qi ^{[3
,4
]}

Liu, Laijun ^{[5
]}

Peng, Biaolin ^{[2
]}

机构：

[1] Guangxi Univ, Sch Resources Environm & Mat, Nanning 530004, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China

[3] UPV EHU Sci Pk, Basque Ctr Mat Applicat & Nanostruct, Barrio Sarriena s-n, Leioa 48940, Spain

[4] Basque Fdn Sci, IKERBASQUE, Plaza Euskadi, 5, Bilbao 48009, Spain

[5] Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2023年 / 49卷 / 07期

基金：

中国国家自然科学基金;

关键词：

PZT thin Films; Sol-gel; Oxygen plasma; Ultra-low temperature; Ferroelectric properties; CERAMICS;

D O I：

10.1016/j.ceramint.2022.11.279

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

PbTi1-xZrxO3 (PZT) thin films prepared by sol-gel method have paid much attention due to the excellent per-formances in piezoelectric, dielectric, ferroelectric and electro-optical. However, the high crystallization tem-perature of the PZT thin films restricts the compatibility with modern COMS technology. In this work, PbZr0.52Ti0.48O3 (PZT) ferroelectric thin films were successfully prepared by sol-gel method at an ultra-low temperature (-450 degrees C) in an oxygen plasma-assisted environment. A large spontaneous polarization-30 mu C/ cm2 and a large dielectric breakdown-2,900 kV/cm were obtained in the sample annealed at 450 degrees C for 25 h. We believe that the oxygen plasma-assisted ultra-low temperature (OPAULT) annealing process is a promising way for the sol-gel technology applied in the modern COMS devices.

引用

页码：10864 / 10870

页数：7

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