Oxygen plasma-assisted ultra-low temperature sol-gel-preparation of the PZT thin films

被引：6

作者：

Li, Han ^{[1
,2
]}

Hu, Yuhao ^{[1
,2
]}

Wei, Siyue ^{[1
,2
]}

Meng, Yingzhi ^{[1
]}

Wang, Ningzhang ^{[1
]}

Zhang, Qi ^{[3
,4
]}

Liu, Laijun ^{[5
]}

Peng, Biaolin ^{[2
]}

机构：

[1] Guangxi Univ, Sch Resources Environm & Mat, Nanning 530004, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China

[3] UPV EHU Sci Pk, Basque Ctr Mat Applicat & Nanostruct, Barrio Sarriena s-n, Leioa 48940, Spain

[4] Basque Fdn Sci, IKERBASQUE, Plaza Euskadi, 5, Bilbao 48009, Spain

[5] Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2023年 / 49卷 / 07期

基金：

中国国家自然科学基金;

关键词：

PZT thin Films; Sol-gel; Oxygen plasma; Ultra-low temperature; Ferroelectric properties; CERAMICS;

D O I：

10.1016/j.ceramint.2022.11.279

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

PbTi1-xZrxO3 (PZT) thin films prepared by sol-gel method have paid much attention due to the excellent per-formances in piezoelectric, dielectric, ferroelectric and electro-optical. However, the high crystallization tem-perature of the PZT thin films restricts the compatibility with modern COMS technology. In this work, PbZr0.52Ti0.48O3 (PZT) ferroelectric thin films were successfully prepared by sol-gel method at an ultra-low temperature (-450 degrees C) in an oxygen plasma-assisted environment. A large spontaneous polarization-30 mu C/ cm2 and a large dielectric breakdown-2,900 kV/cm were obtained in the sample annealed at 450 degrees C for 25 h. We believe that the oxygen plasma-assisted ultra-low temperature (OPAULT) annealing process is a promising way for the sol-gel technology applied in the modern COMS devices.

引用

页码：10864 / 10870

页数：7

共 50 条

[1] Preparation and characterization of ultra-thin ferroelectric PZT films grown by plasma-assisted CVD
Nishida, K
Shirakata, K
Osada, M
Katoda, T
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 789 - 794
[2] Preparation of ultra-thin oxide films by low-temperature remote plasma-assisted process
Niimi, H
Koh, K
Lucovsky, G
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESSING, 1996, 96 (12): : 623 - 630
[3] Low temperature preparation of sol-gel PZT thin films for pyroelectric and other integrated devices
Gunter, JC
Streiffer, SK
Kingon, AI
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 223 - 226
[4] Preparation of PZT thin films for low voltage application by sol-gel method
Soyama, N
Maki, K
Mori, S
Ogi, K
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 611 - 614
[5] Preparation of PZT ferroelectric thin films by Sol-gel process
You, Yufei
Xu, C. H.
Wang, Junpeng
Liu, Yuliang
Xiao, Jinfeng
Dong, Yutao
PROGRESS IN INDUSTRIAL AND CIVIL ENGINEERING, PTS. 1-5, 2012, 204-208 : 4207 - 4210
[6] Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique
Meng, XJ
Cheng, JG
Li, B
Guo, SL
Ye, HJ
Chu, JH
JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 541 - 545
[7] Preparation of PZT ferroelectric thin films by sol-gel processing and their properties
Liu, MD
Lu, CR
Wang, PY
Rao, YH
Zeng, YK
Li, CR
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 49 (03) : 191 - 194
[8] PREPARATION OF PZT THIN-FILMS BY SOL-GEL PROCESS AND PROPERTIES
SAKAI, H
TUCHIYA, T
NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1991, 99 (07): : 630 - 634
[9] Preparation of LiMn2O4 thin-film electrode by the oxygen plasma-assisted sol-gel method
Fukutsuka, T
Sakamoto, K
Matsuo, Y
Sugie, Y
Abe, T
Ogumi, Z
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (12) : A481 - A483
[10] PREPARATION OF PYRITE FILMS BY PLASMA-ASSISTED SULFURIZATION OF THIN IRON FILMS
BAUSCH, S
SAILER, B
KEPPNER, H
WILLEKE, G
BUCHER, E
FROMMEYER, G
APPLIED PHYSICS LETTERS, 1990, 57 (01) : 25 - 27

← 1 2 3 4 5 →