Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors

被引：2

作者：

Saludes-Tapia, M. ^{[1
]}

Campabadal, F. ^{[1
]}

Miranda, E. ^{[2
]}

Gonzalez, M. B. ^{[1
]}

机构：

[1] CSIC, Inst Microelect Barcelona, IMB CNM, Campus UAB, Cerdanyola Del Valles 08193, Spain

[2] Univ Autonoma Barcelona, Dept Engn Elect, Cerdanyola Del Valles 08193, Spain

来源：

SOLID-STATE ELECTRONICS | 2023年 / 207卷

关键词：

Breakdown voltage; Dry etching; HfO2; Memristor; Resistive switching; W electrode; Wet etching; TEMPERATURE;

D O I：

10.1016/j.sse.2023.108718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current-voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

引用

页数：4

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