Fabrication of 4H-SiC piezoresistive pressure sensor for high temperature using an integrated femtosecond laser-assisted plasma etching method

The processing, particularly, etching of brittle, hard, and anti-corrosion materials represented by the third-generation wide bandgap semiconductor silicon carbide (SiC), is a significant challenge. Although SiC has excellent electrical, mechanical, and chemical properties, the difficulty of processing limits its application in various sensor devices. To solve this problem, in this study, an integrated processing method of femtosecond laser-assisted SiC dry etching is proposed, which realizes high surface quality and high rate etching of the SiC microstructure. Specifically, the effects of different laser processing parameters on the processing effect were first studied through orthogonal experiments. Experiments indicate that compared with laser power and laser scan times, laser processing speed has a more obvious impact on the processing effect. Subsequently, considering the elastic modulus anisotropy of SiC, a 5 MPa piezoresistive pressure sensor chip was designed. Using the proposed composite processing method, a chip sensitive diaphragm was obtained. The diaphragm thickness and diameter are 76 mu m and 1700 mu m respectively. The overall sensor chip dimension was 4000 mu m x 4000 mu m x 350 mu m. Static tests demonstrated that the sensor have excellent performance with sensitivity of 6.8 mV/MPa, linearity of 0.69% FS, and repeatability of 0.078% FS. In addition, by designing high-temperature packaging, the sensor achieved a pressure test at 400 degrees C. This study verifies the feasibility of the composite processing method, realizes the fabrication and measurement of high-temperature pressure sensors, and provides a reference for the micro-and nanostructure processing of various SiC sensors.