Hafnia HfO2 is a proper ferroelectric

被引:19
作者
Raeliarijaona, Aldo [1 ]
Cohen, R. E. [1 ]
机构
[1] Carnegie Inst Sci, Earth & Planets Lab, Extreme Mat Initiat, 5241 Broad Branch Rd NW, Washington, DC 20015 USA
关键词
BILBAO CRYSTALLOGRAPHIC SERVER; NEUTRON-DIFFRACTION; STRUCTURAL-ANALYSIS; PHASE-TRANSITIONS; CRYSTAL-STRUCTURE; HIGH-PRESSURE; X-RAY; ENERGY; FILMS; PHONONS;
D O I
10.1103/PhysRevB.108.094109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We clarify the nature of hafnia as a proper ferroelectric and show that there is a shallow double well involving a single soft polar mode as in well-known classic ferroelectrics. Using symmetry analysis, density functional theory structural optimizations with and without epitaxial strain, and density functional perturbation theory, we examine several important possible hafnia structures derived ultimately from the cubic fluorite structure, including baddeleyite (P21/c), tetragonal antiferroelectric P42nmc, Pbca (nonpolar and brookite), ferroelectric rhombohedral (R3m and R3), Pmn21, and Pca21 structures. The latter is considered to be the most likely ferroelectric phase seen experimentally and has an antiferroelectric parent with space group Pbcn, with a single unstable polar mode and a shallow double well with a well depth of 24 meV/atom. Strain is not required for switching or other ferroelectric properties, nor is coupling of the soft mode with any other modes within the ferroelectric Pca21, Pmn21, R3m, or R3 phases.
引用
收藏
页数:10
相关论文
共 50 条
[21]   Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls [J].
Choe, Duk-Hyun ;
Kim, Sunghyun ;
Moon, Taehwan ;
Jo, Sanghyun ;
Bae, Hagyoul ;
Nam, Seung-Geol ;
Lee, Yun Seong ;
Heo, Jinseong .
MATERIALS TODAY, 2021, 50 :8-15
[22]   Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations [J].
Fan, Sheng-Ting ;
Chen, Yun-Wen ;
Liu, C. W. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (23)
[23]   Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO2 Capacitor for Normally Off Application [J].
Kobayashi, Masaharu ;
Ueyama, Nozomu ;
Jang, Kyungmin ;
Hiramoto, Toshiro .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01) :280-285
[24]   Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film [J].
Park, Kunwoo ;
Kim, Dongmin ;
Lee, Kyoungjun ;
Lee, Hyun-Jae ;
Kim, Jihoon ;
Kang, Sungsu ;
Lin, Alex ;
Pattison, Alexander J. ;
Theis, Wolfgang ;
Kim, Chang Hoon ;
Choi, Hyesung ;
Cho, Jung Woo ;
Ercius, Peter ;
Lee, Jun Hee ;
Chae, Seung Chul ;
Park, Jungwon .
ACS NANO, 2024, 18 (38) :26315-26326
[25]   Synthesis, characterization and exploration of the NIR luminescent properties in HfO2: Er, HfO2:Tm and HfO2:Er/Tm films photochemically prepared [J].
Cabello-Guzman, G. ;
Matus, Marcela ;
Fernandez, Luis ;
Caro-Diaz, C. ;
Lillo, Luis ;
Valenzuela-Melgarejo, F. ;
Seguel, Mathias .
MATERIALS CHEMISTRY AND PHYSICS, 2023, 307
[26]   Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack [J].
Feng, Xuan ;
Dong, Shurong ;
Wong, Hei ;
Yu, Danqun ;
Pey, K. L. ;
Shubhakar, K. ;
Lau, W. S. .
MICROELECTRONICS RELIABILITY, 2016, 61 :78-81
[27]   Microstructure tuning facilitated photo-efficiency enhancement and environmental benign nature of HfO2/Mo/HfO2 multilayer films [J].
Dubey, P. ;
Gomez, J. ;
Manandhar, S. ;
Shutthanandan, V ;
Ramana, C., V .
SOLAR ENERGY, 2018, 166 :146-158
[28]   Ferroelectricity in Simple Binary ZrO2 and HfO2 [J].
Mueller, Johannes ;
Boescke, Tim S. ;
Schroeder, Uwe ;
Mueller, Stefan ;
Braeuhaus, Dennis ;
Boettger, Ulrich ;
Frey, Lothar ;
Mikolajick, Thomas .
NANO LETTERS, 2012, 12 (08) :4318-4323
[29]   Crystal structure of Si-doped HfO2 [J].
Zhao, Lili ;
Nelson, Matthew ;
Aldridge, Henry ;
Iamsasri, Thanakorn ;
Fancher, Chris M. ;
Forrester, Jennifer S. ;
Nishida, Toshikazu ;
Moghaddam, Saeed ;
Jones, Jacob L. .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (03)
[30]   Polarization switching in ferroelectric HfO2 from first-principles lattice mode analysis [J].
Qi, Yubo ;
Singh, Sobhit ;
Rabe, Karin M. .
PHYSICAL REVIEW B, 2025, 111 (13)