Investigation of Threshold Voltage and Drain Current Degradations in Si3N4/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation

被引：5

作者：

Kuo, Hung-Ming ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Chang, Kai-Chun ^{[1
]}

Lin, Hsin-Ni ^{[1
]}

Kuo, Ting-Tzu ^{[3
]}

Yeh, Chien-Hung ^{[4
]}

Lee, Ya-Huan ^{[1
]}

Lin, Jia-Hong ^{[1
]}

Tsai, Xin-Ying ^{[5
]}

Huang, Jen-Wei ^{[6
]}

Sze, Simon ^{[7
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Crystal Res, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[5] Natl Yang Ming Chiao Tung Univ, Inst Elect, Dept Mat & Optoelect Sci, Hsinchu 30010, Taiwan

[6] Republ China Mil Acad, Dept Phys, Kaohsiung 83059, Taiwan

[7] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 05期

关键词：

High electron mobility transistors (HEMTs); Si3N4; layer; X-ray irradiation; SINGLE-EVENT TRANSIENTS; ALGAN/GAN HEMTS; OPERATION; DEFECTS;

D O I：

10.1109/TED.2023.3255829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

this study, X-ray irradiation of metal- insulator-semiconductor (MIS) AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. After the X-ray irradiation, the threshold voltage (V-th) shift and ON-state current (I-on) variation are observed. However, after a recovery period, the degradation trend of V-th and that of I-on are in opposite directions. Such opposite degra-dations are demonstrated and explained in this study. As X-rays irradiate the devices, holes, and defects are generated in the GaN layer and Si3N4 layer, respectively. To prove the degradation mechanism induced by X-rays in MIS HEMT, the following characteristics are offered. The drain current (I-d) and the source current (I-s) under the X-ray irradiation are introduced to prove the hole gener-ation. The two-step degradation of the gate current (I-g) after X-ray irradiation provides evidence of the formation of defect states. Moreover, the different degradation behaviors between Schottky-gate HEMT and MIS HEMT are compared and verification of the position of generation of defect states in the Si3N4 layer is given accordingly.

引用

页码：2216 / 2221

页数：6

共 28 条

[21] Process Dependence of Proton-Induced Degradation in GaN HEMTs [J].