High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching

被引:3
|
作者
Kim, Joon-Hyung [1 ]
Son, Jeong-Taek [1 ]
Lim, Jung-Taek [1 ]
Lee, Jae-Eun [1 ]
Song, Jae-Hyeok [1 ]
Baek, Min-Seok [1 ]
Choi, Han-Woong [1 ]
Lee, Eun-Gyu [1 ]
Choi, Sunkyu [1 ]
Lee, Chong-Min [2 ]
Yeo, Sung-Ku [2 ]
Kim, Choul-Young [1 ]
机构
[1] Chungnam Natl Univ, SCD Lab, Daejeon, South Korea
[2] Samsung Res Samsung Elect, Smart Device Team, Seoul, South Korea
来源
2023 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC | 2023年
基金
新加坡国家研究基金会;
关键词
fifth-generation (5G); broadband; complementary metal-oxide-semiconductor (CMOS) Q-band; transformer; low noise amplifier (LNA); GHZ; LNA;
D O I
10.1109/RFIC54547.2023.10186167
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
This study presents a 32-to-46-GHz two-stage low noise amplifier (LNA) with a three-winding transformer-based input matching network. The proposed matching network provides a broadband noise and input matching for the entire operating range without performance degradation. To demonstrate the feasibility of the proposed circuit configuration, the LNA is implemented using a 65-nm bulk complementary metal-oxide-semiconductor (CMOS) process. The measured LNA achieved a gain of > 19.2 dB at 32-46 GHz with a peak of 21.5 dB at 32 and 45 GHz, simultaneously. The minimum noise figure of the fabricated LNA was 2.2 dB at 36.5 GHz, and remains below 3.2 dB across 14 GHz. The input and output return losses were < 10dB from 32 to 45.5 GHz (effective bandwidth). The third- order input intercept (IIP3) point was -7.6 dBm at 38 GHz at the lowest gain when dissipating 22 mA with a 1-V supply voltage.
引用
收藏
页码:125 / 128
页数:4
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