A controllable conduction-type photovoltaic effect in MoTe2

In this study, we unveiled that a conduction type can be controlled from the 2H-MoTe2 ambipolar semiconducting phase to the selective opposite n-type or p-type FETs. The polarity inversion has been achieved through the trapped interface states that exist between h-BN and SiO2 upon illumination with an external gate voltage. For the n-type doping effect, we found that it has a positive coefficient with the thickness of h- BN but the p-type doping was not achieved with a thickness of 50 nm or beyond. For the n-type MoTe2 FET, the carrier concentration non n((n-MoTe2))and mobility mon mu((n-MoTe2)) were calculated to be similar to 2.07 x 10(12) cm(-2) and similar to 20.17 cm(2)/V/ s, respectively, while for the p-type FET n ((p-MoTe2)) and mop mu((p-MoTe2)) are similar to 2.16 x 10(12) cm(-2) and similar to 24.04 cm(2)/V/s, respectively. Moreover, we also develop a lateral PIN diode with an intrinsic region that was in-between n- and p-type FETs. An electrical performance was also monitored, and an ideal rectifying behavior was reached with a rectification ratio ( I-f/ I-r ) of almost >10(6). The PIN diode also exhibits a self-biased photovoltaic behavior with an open-circuit voltage (V-oc = 440.9 mV). This research work may pave the way for fabricating photodiodes with low power consumption using transition metal dichalcogenides materials.