Plasmonic switches based on VO2 as the phase change material

被引:4
作者
Dalal, Kirti [1 ]
Sharma, Yashna [1 ]
机构
[1] Delhi Technol Univ, Dept Elect & Commun Engn, Bawana Rd, Delhi 110042, India
关键词
plasmonics; phase change material; vanadium dioxide; phase transition; plasmonic switching; METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; OPTICAL-PROPERTIES; THIN-FILMS; WAVE-GUIDE; TEMPERATURE; DRIVEN; OXIDE; NANOANTENNAS; RESONANCE;
D O I
10.1088/1361-6528/ad1642
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2 is discussed and the reasons for employing VO2 over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2 proposed in the last decade is carried out. As the phase transition in VO2 can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2 operating in the visible, near-infrared, infrared and terahertz frequency regions.
引用
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页数:30
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