Unravelling the doping mechanism and origin of carrier limitation in Ti-doped In2O3 films

被引：5

作者：

Emmerich, Ann-Katrin ^{[1
]}

Creutz, Kim Alexander ^{[1
]}

Cheng, Yaw-Yeu ^{[1
]}

Jaud, Jean-Christophe ^{[1
]}

Hubmann, Andreas ^{[1
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, Otto Berndt Str 3, D-64287 Darmstadt, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2024年 / 135卷 / 01期

关键词：

INDIUM OXIDE; HIGH-MOBILITY; THIN-FILMS; BULK; GAP;

D O I：

10.1063/5.0175864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ti-doped In O-2 (3 )thin films with varying Ti contents are prepared by partial reactive co-sputtering using ceramic In O-2 (3) and metallic Ti targets and characterized by in situ x-ray photoelectron spectroscopy, electrical conductivity, and Hall-effect measurements. For a substrate temperature of 400 degrees C, the carrier concentration increases faster than the Ti content and saturates at approximate to 7.4x10(20)cm(-3). Based on these results, it is suggested that Ti does not directly act as donor in In 2O 3 but is rather forming TiO (2) precipitates and that the related scavenging of oxygen generates oxygen vacancies in In O-2( 3) as origin of doping. Neutralization of oxygen vacancies is, therefore, suggested to be origin of the limitation of the carrier concentration in Ti-doped In 2O 3 films.

引用

页数：9

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