Optical and photoelectrocatalytic performance of Tin (II) oxide silicate (Sn6SiO8) thin films as a photoanode by Aerosol Assisted Chemical Vapor Deposition

Developing a highly active, cost-effective, environmentally benign and stable photocatalyst for solar hydrogen production is challenging. In the present study, Tin (II) oxide silicate (Sn6SiO8) thin films are deposited on FTO coated glass substrate from precursor [bis(trimethylsilanolato)tin], Sn6O4(OSiMe3)(4) compound by AACVD technique at 550 and 500 C. Fabricated thin films were then physically analyzed by XRD, Raman, XPS, SEM, and EDX analysis to verify the formation of Sn6SiO8 in granular and compact morphology respectively, the optical band gap of 2.48 and 2.40 eV were recorded by UV-Visible spectrophotometry. Photoelectrocatalytic response of the Sn6SiO8 electrode proved that it is the n -type semiconductor and, therefore exhibits higher photocurrent of 3.79 and 3.13 mA/cm(2) at +0.71 V versus Ag/AgCl was found for the photoelectrode deposited at 550 and 500 C which led to better stability for 1200 s.