Tunable Electronic Properties of Two-Dimensional GaSe1-xTex Alloys

被引：1

作者：

Liu, Hsin-Yi ^{[1
]}

Wu, Jhao-Ying ^{[2
,3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Phys QTC Higem, Tainan 701, Taiwan

[2] Natl Kaohsiung Univ Sci & Technol, Ctr Gen Studies, Kaohsiung 811, Taiwan

[3] Natl Kaohsiung Univ Sci & Technol, Dept Energy & Refrigerating Air Conditioning Engn, Kaohsiung 811, Taiwan

来源：

NANOMATERIALS | 2023年 / 13卷 / 05期

关键词：

nanomaterials; semiconductors; electronic properties; OPTICAL-PROPERTIES; GASE; MONOCHALCOGENIDES; GROWTH; INSE;

D O I：

10.3390/nano13050818

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we performed a theoretical study on the electronic properties of monolayer GaSe1-xTex alloys using the first-principles calculations. The substitution of Se by Te results in the modification of a geometric structure, charge redistribution, and bandgap variation. These remarkable effects originate from the complex orbital hybridizations. We demonstrate that the energy bands, the spatial charge density, and the projected density of states (PDOS) of this alloy are strongly dependent on the substituted Te concentration.

引用

页数：12

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