Growing clean crystals from dirty precursors: Solid-source metal-organic molecular beam epitaxy growth of superconducting Sr2RuO4 films

被引：5

作者：

Choudhary, Rashmi ^{[1
]}

Liu, Zhaoyu ^{[2
]}

Cai, Jiaqi ^{[2
]}

Xu, Xiaodong ^{[2
,3
]}

Chu, Jiun-Haw ^{[2
]}

Jalan, Bharat ^{[1
]}

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Washington, Dept Phys, Seattle, WA 98105 USA

[3] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

来源：

APL MATERIALS | 2023年 / 11卷 / 06期

关键词：

PULSED-LASER DEPOSITION; SRTIO3; THIN-FILMS; T-C; TEMPERATURE; DISORDER;

D O I：

10.1063/5.0150893

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultra-high purity elemental sources have long been considered a prerequisite for obtaining low impurity concentrations in compound semiconductors in the world of molecular beam epitaxy (MBE) since its inception in 1968. However, we demonstrate that a "dirty" solid precursor, ruthenium(III) acetylacetonate [also known as Ru(acac)(3)], can yield single-phase, epitaxial, and superconducting Sr2RuO4 films with the same ease and control as III-V MBE. A superconducting transition was observed at similar to 0.9 K, suggesting a low defect density and a high degree of crystallinity in these films. In contrast to the conventional MBE, which employs the ultra-pure Ru metal evaporated at similar to 2000 degrees C as a Ru source, along with reactive ozone to obtain Ru -> Ru4+ oxidation, the use of the Ru(acac)(3) precursor significantly simplifies the MBE process by lowering the temperature for Ru sublimation (less than 200 degrees C) and by eliminating the need for ozone. Combining these results with the recent developments in hybrid MBE, we argue that leveraging the precursor chemistry will be necessary to realize next-generation breakthroughs in the synthesis of atomically precise quantum materials.

引用

页数：6

共 47 条

[1] Intrinsic superconducting parameters of Sr2RuO4 [J].