Slow-light-enhanced on-chip 1D and 2D photonic crystal waveguide gas sensing in near-IR with an ultrahigh interaction factor

被引:5
|
作者
Peng, Zihang [1 ]
Huang, Yijun [1 ]
Zheng, Kaiyuan [2 ,3 ]
Zheng, Chuantao [1 ]
Pi, Mingquan [1 ]
Zhao, Huan [1 ]
Ji, Jialin [1 ]
Min, Yuting [1 ]
Liang, Lei [4 ]
Song, Fang [1 ]
Zhang, Yu [1 ]
Wang, Yiding [1 ]
Tittel, Frank k. [5 ]
机构
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong 518060, Peoples R China
[3] Hong Kong Polytech Univ, Photon Res Inst, Hong Kong 518060, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[5] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
基金
中国国家自然科学基金;
关键词
ABSORPTION-SPECTROSCOPY; SENSOR; BIOSENSOR; SAPPHIRE; WATER; MODE;
D O I
10.1364/PRJ.494762
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Nanophotonic waveguides hold great promise to achieve chip-scale gas sensors. However, their performance is limited by a short light path and small light-analyte overlap. To address this challenge, silicon-based, slow-light enhanced gas-sensing techniques offer a promising approach. In this study, we experimentally investigated the slow light characteristics and gas-sensing performance of 1D and 2D photonic crystal waveguides (PCWs) in the near-IR (NIR) region. The proposed 2D PCW exhibited a high group index of up to 114, albeit with a high propagation loss. The limit of detection (LoD) for acetylene (C2H2) was 277 parts per million (ppm) for a 1 mm waveguide length and an averaging time of 0.4 s. The 1D PCW shows greater application potential compared to the 2D PCW waveguide, with an interaction factor reaching up to 288%, a comparably low propagation loss of 10 dB/cm, and an LoD of 706 ppm at 0.4 s. The measured group indices of the 2D and 1D waveguides are 104 and 16, respectively, which agree well with the simulation results. (c) 2023 Chinese Laser Press
引用
收藏
页码:1647 / 1656
页数:10
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