Carrier and phonon transport in 2D InSe and its Janus structures

被引：9

作者：

Wan, Wenhui ^{[1
,2
]}

Guo, Rui ^{[1
,2
]}

Ge, Yanfeng ^{[1
,2
]}

Liu, Yong ^{[1
,2
]}

机构：

[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China

[2] Yanshan Univ, Key Lab Microstruct Mat Phys Hebei Prov, Sch Sci, Qinhuangdao 066004, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2023年 / 35卷 / 13期

基金：

中国国家自然科学基金;

关键词：

InSe; mobility; thermal conductivity; Janus structure; ELECTRON-SCATTERING MECHANISMS; THERMAL-CONDUCTIVITY; HIGH-PERFORMANCE; OPTICAL-PROPERTIES; BAND-STRUCTURE; LAYERED INSE; MONOLAYER; MOBILITY; SEMICONDUCTORS; HETEROSTRUCTURE;

D O I：

10.1088/1361-648X/acb2a5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.

引用

页数：26

共 196 条

[1] Thermal conductivity of GaS and GaSe layered semiconductors [J].

Abdullaev, NA ;

Aldzhanov, MA ;

Kerimova, ÉM .

PHYSICS OF THE SOLID STATE, 2002, 44 (02) :221-222

[2] Electronic, mechanical, optical and photocatalytic properties of two-dimensional Janus XGaInY (X, Y ;= S, Se and Te) monolayers [J].

Ahmad, Iqtidar ;

Shahid, Ismail ;

Ali, Anwar ;

Gao, Lei ;

Cai, Jinming .

RSC ADVANCES, 2021, 11 (28) :17230-17239

[3] Thermal conductivity of suspended few-layer MoS2 [J].

Aiyiti, Adili ;

Hu, Shiqian ;

Wang, Chengru ;

Xi, Qing ;

Cheng, Zhaofang ;

Xia, Minggang ;

Ma, Yanling ;

Wu, Jianbo ;

Guo, Jie ;

Wang, Qilang ;

Zhou, Jun ;

Chen, Jie ;

Xu, Xiangfan ;

Li, Baowen .

NANOSCALE, 2018, 10 (06) :2727-2734

[4] Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe [J].

Arora, Himani ;

Erbe, Artur .

INFOMAT, 2021, 3 (06) :662-693

[5] HEAT CONDUCTIVITY OF INDIUM SELENIDE [J].

ATAKISHI.SM ;

ABDINOV, DS ;

AKHUNDOV, GA .

PHYSICA STATUS SOLIDI, 1968, 28 (01) :K47-&

[6] The Janus structures of group-III chalcogenide monolayers as promising photocatalysts for water splitting [J].

Bai, Yujie ;

Zhang, Qinfang ;

Xu, Ning ;

Deng, Kaiming ;

Kan, Erjun .

APPLIED SURFACE SCIENCE, 2019, 478 :522-531

[7]

Bandurin DA, 2017, NAT NANOTECHNOL, V12, P223, DOI [10.1038/NNANO.2016.242, 10.1038/nnano.2016.242]

[8] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[9] Large-area optoelectronic-grade InSe thin films via controlled phase evolution [J].

Bergeron, Hadallia ;

Guiney, Linda M. ;

Beck, Megan E. ;

Zhang, Chi ;

Sangwan, Vinod K. ;

Torres-Castanedo, Carlos G. ;

Gish, J. Tyler ;

Rao, Rahul ;

Austin, Drake R. ;

Guo, Silu ;

Lam, David ;

Su, Katherine ;

Brown, Paul T. ;

Glavin, Nicholas R. ;

Maruyama, Benji ;

Bedzyk, Michael J. ;

Dravid, Vinayak P. ;

Hersam, Mark C. .

APPLIED PHYSICS REVIEWS, 2020, 7 (04)

[10] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

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