Rear interface engineering via a facile oxidation process of Mo back contact for highly efficient CZTSSe thin film solar cells

被引：7

作者：

Baek, Myeong Cheol ^{[1
,2
]}

Jang, Jun Sung ^{[1
,2
]}

Suryawanshi, Mahesh P. ^{[3
]}

Karade, Vijay C. ^{[1
,2
]}

Kim, Jihun ^{[4
]}

He, Mingrui ^{[3
]}

Park, Sang Woo ^{[1
,2
]}

Kim, Jin Hyeok ^{[1
,2
]}

Shin, Seung Wook ^{[5
]}

机构：

[1] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Gwangju 61186, South Korea

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 61186, South Korea

[3] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[4] Korea Inst Energy Res KIER, Gwangju Bio Energy R&D Ctr, Gwangju 61003, South Korea

[5] Korea Rural Community Corp, Rural Res Inst, Future Agr Res Div, Naju Si 58327, Jeonranam Do, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 935卷

基金：

新加坡国家研究基金会;

关键词：

Thin-film solar cells (TFSCs); Rear contact engineering; MoOx; Intermediate layer; Kesterite; CURRENT CHALLENGES; MOLYBDENUM; LAYER; OXIDE; BAND;

D O I：

10.1016/j.jallcom.2022.167993

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are promising absorber material for next-generation TFSCs technology because they exhibit earth-abundant, non-toxic elements and fa-vorable optoelectronic properties. However, the progress and device performance development in CZTSSe TFSCs were limited because of unstable rear interface characteristics near the absorber/molybdenum (Mo) interface, which causes large open-circuit voltage loss. In this study, we report the rear interface en-gineering of CZTSSe TFSCs to improve device performance by introducing an amorphous thin MoOx in-termediate layer by a facile oxidation process. We observed that (i) an amorphous thin MoOx intermediate layer can effectively control the rear interface properties (i.e., inhibiting the formation of Mo(S,Se)2 inter-facial layers and voids at CZTSSe/Mo interface) and (ii) the improved device performance in CZTSSe TFSCs with oxidation (w-oxidation) is attributed primarily to the dramatically decreased shunt conductance, formation of large-sized grains within CZTSSe absorber layer, and improved rear interface characteristics. This study presents a simple and low-temperature oxidation process for rear interface engineering of highly efficient kesterite CZTSSe-based TFSCs.(c) 2022 Published by Elsevier B.V.

引用

页数：10

共 63 条

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