I-V characteristics of the single quantum dot within impurity Anderson model: the role of correlation regime

被引:0
作者
Shamer, M. K. [1 ]
Al-Mukh, J. M. [1 ]
机构
[1] Univ Basrah, Coll Educ Pure Sci, Dept Phys, Basrah, Iraq
关键词
Anderson model; Quantum dot; Charge current; Magnetic field; ELECTRON-TRANSPORT; STATES;
D O I
10.1007/s12648-023-02822-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Charge current through a single quantum dot coupled to a source and drain with an applied bias voltage is studied. The current-voltage characteristics are calculated using our treatment within the Anderson model. The dependence of the current-voltage characteristics on the Coulomb energy, temperature, gate voltage, and magnetic field is examined. A clear dependence of all the practical requirements, functions and parameters considered in our work to describe the electron transport throughout the quantum dot is highlighted. Our results can be experimentally realized and it is easy to tune practical parameters to determine the correlation regime for a certain spin.
引用
收藏
页码:543 / 548
页数:6
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