Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoOx hole contact and atomic-layer-deposited AlZnO layer

We present the performance enhancement of a heterojunction Si solar cell facilitated by incorporating an atomiclayer -deposited (ALD) MoOx hole contact layer and an ALD Al -doped ZnO (AZO) transparent conductive oxide (TCO). ALD MoOx thin films as a hole -selective contact layer instead of P+ -doped amorphous Si in Si heterojunction solar cells, with subsequent growth of ALD AZO films grown on the MoOx layer preceding the indiumtin -oxide sputtering deposition. Integrating ALD MoOx hole -selective contact and ALD AZO TCO manifests an augmentation in the short-circuit current in heterojunction Si solar cells due to the heightened carrier transport and concurrent reduction in sputtering -induced damage. Consequently, the heterojunction Si solar cell employing the ALD MoOx film and ALD AZO layer yielded a 1.1 % increase in efficiency relative to the reference heterojunction solar cell.