Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays

被引：2

作者：

Choi, Minkeun ^{[1
]}

Kwak, Hyeon-Tak ^{[2
]}

Kim, Hyangwoo ^{[1
,3
]}

Yoo, Hyeongseok ^{[1
]}

Park, Ju Hong ^{[1
]}

Baek, Chang-Ki ^{[1
,2
,3
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Convergence IT Engn, Pohang 37673, South Korea

[2] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 37673, South Korea

[3] Pohang Univ Sci & Technol, Future IT Innovat Lab, Pohang 37673, South Korea

来源：

OPTICS EXPRESS | 2023年 / 31卷 / 23期

关键词：

SCHOTTKY; ABSORPTION;

D O I：

10.1364/OE.503871

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a near-infrared (NIR) photodiode (PD) by using a wave-shaped sidewall silicon nanopillars (WS-SiNPs) structure. The designed WS sidewall nanostructure increases the horizontal component of incident light and induces multiple whispering-gallery modes with low-quality factor, which increases the light absorption path. Thus, the WS-SiNP PD shows improved spectral responsivity and external quantum efficiency over straight sidewall silicon nanopillars and planar PDs in the NIR region. Especially, the peak responsivity of 0.648 A/W is achieved at a wavelength of 905 nm, which is used for light detection and ranging. Comparison with commercial photodiodes demonstrates the good optoelectrical characteristics of the fabricated device. The improved characteristics are validated by 3D finite differential time domain simulations. Based on these results, our device shows the potential for cost-effective Si-based optoelectronic devices to be utilized in future advanced applications. (c) 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

引用

页码：38013 / 38023

页数：11

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