Thermal rectification of a vanadium dioxide based conductive thermal diode under transient Dirichlet conditions

被引:5
作者
Haratoka, Cagatay [1 ]
Joulain, Karl [1 ]
Ezzahri, Younes [1 ]
机构
[1] Univ Poitiers, Inst Pprime, CNRS, ISAE ENSMA, Futuroscope, F-86962 Chasseneuil, France
关键词
Thermal rectification; Thermal diode; Phase change materials (PCM); Vanadium dioxide; Thermal conductivity; Specific heat; OXIDES;
D O I
10.1016/j.ijheatmasstransfer.2023.124452
中图分类号
O414.1 [热力学];
学科分类号
摘要
We focus in this work on analysing the behaviour of a thermal diode and consider its operation in the conductive heat transfer regime. The thermal rectification of a thermal diode made of VO2 and SiO2, is investigated in detail by changing different intrinsic and extrinsic parameters under the Dirichlet bound-ary conditions. The behaviour of the thermal diode is numerically examined according to each parameter individually. We found that the thermal rectification factor can rise to very high values in the first mo-ments of the transient process before reaching steady-state conditions. This feature makes the study of the thermal diode behaviour under transient conditions very promising to pave the way for a better con-trol of practical thermal management systems. & COPY; 2023 Elsevier Ltd. All rights reserved.
引用
收藏
页数:9
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