Low-Temperature Growth of ZnMgO Thin Films by Atmospheric Spin-Coating Using Diethylzinc Solution

被引：2

作者：

Yoshino, Kenji ^{[1
]}

Tominaga, Himeka ^{[1
]}

Komaki, Yuta ^{[1
]}

Imai, Masato ^{[1
]}

Higashi, Tomohiro ^{[2
]}

Minemoto, Takashi ^{[3
]}

Shen, Qing ^{[4
]}

Hayase, Shuzi ^{[5
]}

机构：

[1] Univ Miyazaki, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Univ Miyazaki, Inst Tenure Track Promot, Miyazaki 8892192, Japan

[3] Ritsumeikan Univ, Dept Elect & Elect Engn, Shiga 5258577, Japan

[4] Univ Electrocommun, Dept Engn Sci, Chofu, Tokyo 1828585, Japan

[5] Univ Electrocommun, i Powered Energy Syst Res Ctr, Chofu, Tokyo 1828585, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2023年 / 52卷 / 08期

关键词：

ZnMgO; spin coating; diethylzinc; XRD; SEM; AFM;

D O I：

10.1007/s11664-023-10475-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Non-doped ZnMgO thin film deposited at room temperature on a white glass using a diethylzinc-based solution grown by atmospheric conventional spin coating was annealed at 150 degrees C. The sample had an average optical transmittance of more than 85% in the visible region, and a-axis orientation hexagonal polycrystal, a dense crystal, and a flat surface. Moreover, the n-type sample was obtained from the predominant zinc interstitial caused by x-ray photoemission spectroscopy. A sample had a resistivity of 14 x 10(6) Omega cm, carrier concentration of 3.9 x 10(11) cm(-3), and mobility of 5.0 cm(2) (Vs)(-1). [GRAPHICS] .

引用

页码：5134 / 5139

页数：6

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