Radiation tolerance studies of the HV-mux GaNFETs for the HL-LHC ATLAS ITk Strip detector

被引：0

作者：

Capocasa, F. ^{[1
]}

Fielitz, W. ^{[2
]}

Zagazeta, L. F. Gutierrez ^{[3
]}

Kierstead, J. ^{[2
]}

Lynn, D. ^{[2
]}

Musso, C. ^{[2
]}

Stucci, S. ^{[2
]}

机构：

[1] Brandeis Univ, Martin A Fisher Sch Phys, 415 South St, Waltham, MA 02453 USA

[2] Brookhaven Natl Lab, Phys Dept, 20 Penn St, Long Isl City, NY 11973 USA

[3] Univ Penn, Dept Phys & Astron, 209 S 33rd St, Philadelphia, PA 19104 USA

来源：

JOURNAL OF INSTRUMENTATION | 2023年 / 18卷 / 04期

关键词：

Detection of defects; Inspection with gamma rays; Radiation damage to electronic components; Radiation-hard electronics;

D O I：

10.1088/1748-0221/18/04/C04006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

For the High-Luminosity upgrade of the LHC, the current ATLAS inner detector will be replaced with a new silicon charged-particle tracker, the ITk, which consists of the ITk Pixel and the ITk Strip subdetector. The high voltage multiplexing (HV-Mux) GaNFETs are radiation -tolerant transistors that permit switching off high voltage to malfunctioning sensors on the ITk Strip modules. To ensure the reliability of the GaNFETs in the high radiation environment expected at the HL-LHC, a sample of the production batch was exposed to gamma radiation. The GaNFETs were characterized pre-irradiation and post-irradiation, and monitored during irradiation.

引用

页数：8

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