1-Adamantanamine Hydrochloride Resists Environmental Corrosion to Obtain Highly Efficient and Stable Perovskite Solar Cells

被引:5
作者
Liu, Baibai [1 ]
He, Dongmei [1 ]
Zhou, Qian [1 ]
Chen, Yu [1 ]
He, Peng [1 ]
Han, Xiao [1 ]
Ma, Danqing [1 ]
He, Yong [1 ]
Li, Yuelong [4 ]
Zhao, Pengjun [5 ]
Xu, Zong-Xiang [2 ,3 ]
Lu, Shirong
Zang, Zhigang [1 ]
Chen, Jiangzhao [1 ]
机构
[1] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Minist Educ, Chongqing 400044, Peoples R China
[2] Southern Univ Sci & Technol, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
[3] Taizhou Univ, Dept Mat Sci & Technol, Taizhou 318000, Peoples R China
[4] Nankai Univ, Solar Energy Res Ctr, Inst Photoelect Thin Film Devices & Technol, Key Lab Photoelect Thin Film Devices & Technol Tia, Tianjin 300350, Peoples R China
[5] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Xinjiang, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1021/acs.jpclett.3c00298
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Passivating the defective surface of perovskite film is a promising strategy to improve the stability and efficiency of perovskite solar cells (PSCs). Herein, 1-adamantanamine hydrochloride (ATH) is introduced to the upper surface of the perovskite film to heal the defects of the perovskite surface. The best-performance ATH-modified device has a higher efficiency (23.45%) than the champion control device (21.53%). The defects are passivated, interfacial nonradiative recombination is suppressed, and interface stress is released by the ATH deposited on the perovskite film, leading to longer carrier lifetimes and enhancement in open-circuit voltage (VOC) and fill factor (FF) of the PSCs. With obvious improvement, VOC and FF of 1.159 V and 0.796 for the control device are raised to 1.178 V and 0.826 for the ATH-modified device, respectively. Finally, during an operational stability measurement of more than 1000 h, the ATH-treated PSC exhibited better moisture resistance, thermal persistence, and light stability.
引用
收藏
页码:2501 / 2508
页数:8
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