Theoretical study of n-type diamond with Li doping and Li-B co-doping: A density functional simulation

被引:9
作者
Zhang, Dongliang [1 ]
Sun, Xiang [2 ]
Zhang, Yanyan [1 ]
Cheng, Chunmin [2 ]
Guo, Yuzheng [2 ]
Gan, Zhiyin [1 ]
Liu, Sheng [1 ,2 ,3 ,4 ]
Hao, Yue [5 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
[2] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
[3] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China
[4] Wuhan Univ, Sch Microelect, Wuhan 430072, Peoples R China
[5] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
基金
中国国家自然科学基金;
关键词
Diamond; n -type doping; Low formation energy; Shallow donor impurity; DFT; Lithium-Boron co-doped diamond; DOPED DIAMOND; CVD DIAMOND; BORON; LITHIUM; NITROGEN; GROWTH; IMPURITIES; CONSTANT; DEFECTS; SULFUR;
D O I
10.1016/j.diamond.2022.109544
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Lithium-doped and Lithium-Boron (Li-B) co-doped diamonds were investigated by density functional theory to find out potential shallow donor impurities in diamond. In Li doped diamond, only interstitial Li doped diamond shows an effective n-type property with a low ionization energy of 0.04 eV. However, an extremely low solubility was found in diamond. In order to overcome this obstacle, co-doping with boron exhibits a unique advantage. A comprehensive research of different Li-B co-doping structures was conducted. With the help of B atom, the solubility of Li is greatly improved. Moreover, through first-principles calculations, we found for the first time that Lii2-B co-doped diamond has both low formation energy (-6.17 eV) and low ionization energy (0.29 eV). The 2p states of B and 2s states of Li dominate the conduction band minimum (CBM). Li atoms have many adsorption sites on intrinsic and B doped (001) surface of diamond, among which the bridge site of the dimer chain is the most suitable adsorption site for Li. It suggests that through the addition of B, Lii2-B co-doping can be an up-and coming candidate of effective shallow donor impurity in diamond.
引用
收藏
页数:8
相关论文
共 61 条
  • [1] A novel multicommutation stopped-flow system for the simultaneous determination of sulfamethoxazole and trimethoprim by differential pulse voltammetry on a boron-doped diamond electrode
    Andrade, Leonardo Santos
    Rocha-Filho, Romeu Cardozo
    Cass, Quezia Bezerra
    Fatibello-Filho, Orlando
    [J]. ANALYTICAL METHODS, 2010, 2 (04) : 402 - 407
  • [2] Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond
    Balasubramaniam, Y.
    Pobedinskas, P.
    Janssens, S. D.
    Sakr, G.
    Jomard, F.
    Turner, S.
    Lu, Y. -G.
    Dexters, W.
    Soltani, A.
    Verbeeck, J.
    Barjon, J.
    Nesladek, M.
    Haenen, K.
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (06)
  • [3] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [4] PREPARATION OF DIAMOND
    BOVENKERK, HP
    BUNDY, FP
    HALL, HT
    STRONG, HM
    WENTORF, RH
    [J]. NATURE, 1959, 184 (4693) : 1094 - 1098
  • [5] High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
    Brandt, O
    Yang, H
    Kostial, H
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2707 - 2709
  • [7] Chevallier J, 1999, PHYS STATUS SOLIDI A, V174, P73, DOI 10.1002/(SICI)1521-396X(199907)174:1<73::AID-PSSA73>3.0.CO
  • [8] 2-5
  • [9] Hunting the elusive shallow n-type donor - An ab initio study of Li and N co-doped diamond
    Conejeros, Sergio
    Othman, M. Zamir
    Croot, Alex
    Hart, Judy N.
    O'Donnell, Kane M.
    May, Paul W.
    Allan, Neil L.
    [J]. CARBON, 2021, 171 : 857 - 868
  • [10] CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE
    DAVIS, RF
    SITAR, Z
    WILLIAMS, BE
    KONG, HS
    KIM, HJ
    PALMOUR, JW
    EDMOND, JA
    RYU, J
    GLASS, JT
    CARTER, CH
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01): : 77 - 104