a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm

被引：1

作者：

Akritidis, K. ^{[1
,2
,3
]}

Billet, M. ^{[1
,2
]}

Saseendran, S. S. ^{[3
]}

Poelman, S. ^{[1
,2
]}

Roelkens, G. ^{[1
,2
]}

Neutens, P. ^{[3
]}

Brouckaert, J. ^{[3
]}

Van Dorpe, P. ^{[3
]}

Kuyken, B. ^{[1
,2
]}

机构：

[1] Univ Ghent, Dept Informat Technol, Photon Res Grp, Imec, Technol Pk Zwijnaarde 126, B-9052 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton, Ghent, Belgium

[3] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium

来源：

2023 IEEE PHOTONICS CONFERENCE, IPC | 2023年

关键词：

SiN photonics; integrated lasers; evanescent coupling; III/V amplifiers;

D O I：

10.1109/IPC57732.2023.10360576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Overcoming the high index contrast between SiN and III-V amplifiers is essential for the realization of heterogeneously integrated evanescently coupled lasers. Here, we propose a design based on a-Si:H as the transition layer, demonstrating sub-1.2 dB loss for the whole SiN-III/V-SiN transition at 920 nm.

引用

页数：2

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