Implementation of Photosynaptic and Electrical Memory Functions in Organic Nano-Floating-Gate Transistors via a Perovskite-Nanocrystal-Based Nanocomposite Tunneling Layer

被引:7
作者
Moon, Byung Joon [1 ,2 ]
Song, Young-Seok [3 ]
Son, Dabin [4 ]
Yang, Hee Yun [1 ,3 ]
Bae, Sukang [1 ,2 ]
Lee, Seoung-Ki [5 ]
Lee, Sang Hyun [4 ]
Kim, Tae-Wook [2 ,3 ]
机构
[1] Korea Inst Sci & Technol, Inst Adv Composite Mat, Funct Composite Mat Res Ctr, 92 Chudong ro, Wonju 55324, Jeollabuk Do, South Korea
[2] Jeonbuk Natl Univ, Ind Acad Convergence Res, Dept JBNU KIST, 567 Baekje daero, Jeonju 54896, South Korea
[3] Jeonbuk Natl Univ, LANL JBNU Engn Inst Korea, Dept Flexible & Printable Elect, 567 Baekje daero, Jeonju 54896, South Korea
[4] Chonnam Natl Univ, Sch Chem Engn, 77 Yongbong ro, Gwangju 61186, South Korea
[5] Pusan Natl Univ, Sch Mat Sci & Engn, 2,Busandaehak ro 63 beon gil, Busan 46241, South Korea
来源
SMALL SCIENCE | 2023年 / 3卷 / 09期
基金
新加坡国家研究基金会;
关键词
nanocomposites; memory; organic nano-floating gate transistors; photosynaptic; provskite nanocrystals; HIGHLY LUMINESCENT; NANOPARTICLES; PERFORMANCE; MOBILITY;
D O I
10.1002/smsc.202300068
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An organic nano-floating-gate transistor (ONFGT) with both photosynaptic and electrical memory functions is developed using a perovskite (CsPbBr3) NC-insulating polymer (polystyrene; PS) nanocomposite and CsPbBr3 NCs as the tunneling and floating gate layers, respectively. The introduction of the CsPbBr3 NCs-PS nanocomposite layer improves the photoresponsivity of the ONFGT under ultraviolet-visible irradiation, resulting in an increase in both the photocurrent and the light-to-dark current ratio by 10(-8) A and 10(4) orders of magnitude, respectively. It also exhibits high responsivity (0.804 A W-1) and external quantum efficiency (249.3%) under 400 nm irradiation. Furthermore, the photosynaptic characteristics of the ONFGT under visible-light irradiation are investigated. To mimic biological nervous systems, the photocurrent of the device is dynamically modulated by varying the light intensity and duration. Notably, an increase in synaptic weight is observed under repeated photonic stimulations, as shown by changes in synaptic weight with each light pulse. Also, the ONFGT exhibits excellent nonvolatile memory characteristics in the dark, displaying a hysteresis window value of 2.9 V for a gate double sweep under & PLUSMN;5.0 V. Consequently, the perovskite NCs-insulating polymer nanocomposite tunneling layer is crucial for enabling photoresponsivity and memory characteristics in nano-floating-gate transistors, making them suitable for multifunctional electronic devices.
引用
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页数:11
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