Effects of Surface Oxidation on the Magnetic Properties of Fe-Based Amorphous Metal Powder Made by Atomization Methods

被引:1
|
作者
Lee, Tae-Kyung [1 ]
Kim, Seung-Wook [1 ]
Jeong, Dae-Yong [1 ]
机构
[1] Inha Univ, Dept Mat Sci & Engn, 100 Inha Ro, Incheon 22212, South Korea
关键词
Amorphous metal powder; Soft magnetic; Surface oxidation; High permeability; SOFT; ALLOYS; COMPOSITES; OXIDE;
D O I
10.1007/s13391-023-00455-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The demand for soft magnetic amorphous metal powders with high saturation magnetization values and low energy loss has increased to achieve high-performance inductors for mobile electronic devices. In this study, Fe-based Fe92.3Si3.5B3.0C0.7P0.5 (wt.%) amorphous metal powders were prepared using different atomization methods for controlling the surface oxidation of the metal alloy powder. Conventional high-pressure water atomization and the newly developed high-speed water screen atomization methods were used for preparation. Regardless of the preparation methods, both alloy powders were amorphous, and their magnetic flux density (Bs) values were more than 165 emu/g. Compared to the powders from the conventional high-pressure water atomization method, the amorphous metal powder manufactured using the high-speed water screen atomization process had lower eddy current loss because of the formation of a thin and uniform oxide layer. Furthermore, the magnetic properties of the consolidated magnetic cores fabricated with the amorphous powders produced by the highspeed water screen atomization method using compact-pressing techniques were characterized. Magnetic powders with fewer surface oxidation layers exhibited increased initial permeability and a smaller coercive field, leading to a lower core loss value. The magnetic core made from Fe92.3Si3.5B3.0C0.7P0.5 (wt.%) amorphous powder with an oxide content of 0.12 (wt.%) using the high-speed water screen atomization method exhibited an initial permeability of 25 in the frequency range up to 5 MHz, and a loss of 237 mW/cm(3) with B-m = 0.2 T at 1 MHz. [GRAPHICS] .
引用
收藏
页码:261 / 268
页数:8
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