Influence of Cr2O3 doping on the electrical characteristics of novel ZnO-Cr2O3-based varistor ceramics

被引：21

作者：

Tian, Tian ^{[1
]}

Zheng, Liaoying ^{[1
]}

Bernik, Slavko ^{[2
]}

Man, Zhenyong ^{[1
]}

Shi, Xue ^{[1
]}

Ruan, Xuezheng ^{[1
]}

Li, Guorong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 201899, Peoples R China

[2] Jozef Stefan Inst, Dept Nanostruct Mat, SI-1000 Ljubljana, Slovenia

来源：

MATERIALS RESEARCH BULLETIN | 2023年 / 159卷

关键词：

Zinc oxide; Chromium oxide; Varistor ceramics; Microstructure; Electrical properties; ZNO; MICROSTRUCTURE; SPECTROSCOPY; IMPEDANCE; SB2O3;

D O I：

10.1016/j.materresbull.2022.112111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Novel ZnO-Cr2O3-based varistors can overcome the problems related to the volatile, high-cost and toxic com-ponents of conventional ZnO-Bi2O3-, ZnO-Pr6O11-, and ZnO-V2O5-based varistors. The influence of the varistor former with different doping levels, i.e., the Cr2O3, on the microstructure and electrical properties was examined and the optimal amount of Cr2O3 doping to enhance the electrical performance of ZnO-Cr2O3-based varistor ceramics was determined. The results showed that about 0.1 mol.% of Cr2O3 is optimal for the formation of the electrostatic double Schottky barriers with increased height at the grain boundaries (GBs) and thus an enhanced I -V nonlinearity (i.e., a coefficient of nonlinearity alpha = 73) and a lower leakage current (IL < 0.2 mu A/cm2) in ZnO-Cr2O3-based varistor ceramics with an Eb of 383 V/mm. For larger additions of Cr2O3, a Ca3(CrO4)2 phase forms, which decreases the barrier height and leads to a lowering of alpha and an increase in IL.

引用

页数：5

共 30 条

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